Characterization of Low-Temperature Silicon Nitride LPCVD from Bis„tertiary-butylamino...silane and Ammonia

Low pressure chemical vapor deposition ~LPCVD! of silicon nitride from bis~tertiary-butylamino!silane ~BTBAS! and ammonia precursors has been demonstrated at 550-600°C in a 200 mm vertical batch furnace system. Deposition rates of 4-30 Å/min are achieved with a film thickness variation below 2% 1-sigma. Silicon nitride depositions using BTBAS and NH3 were found to retain a significant mass-transfer limiting component at temperatures ,600°C. Substantial carbon and hydrogen incorporation are detected in low-temperature BTBAS silicon nitride, relative to dichlorosilane based silicon nitride deposited at higher temperature. These impurities result in the formation of a SiNCH solid solution with carbon substitution of nitrogen and disproportionate occupation of silicon and nitrogen sites by interstitial hydrogen. Optical and physical properties of silicon nitride are significantly altered by the addition of carbon and hydrogen impurities. Etch resistance of BTBAS-derived silicon nitride was found to diminish at elevated hydrogen levels. However, increasing etch resistance is observed in silicon nitride films with higher carbon levels. The data from this study indicate that carbon and hydrogen impurity concentrations may be tuned to produce silicon nitride with specific material properties. © 2004 The Electrochemical Society. @DOI: 10.1149/1.1690294# All rights reserved.